Chi Zhendong, Lau Yong-Chang, Xu Xiandong, Ohkubo Tadakatsu, Hono Kazuhiro, Hayashi Masamitsu
Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan.
National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan.
Sci Adv. 2020 Mar 6;6(10):eaay2324. doi: 10.1126/sciadv.aay2324. eCollection 2020 Mar.
We have studied the charge to spin conversion in Bi Sb /CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter-deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi Sb . The SHC increases with increasing Bi Sb thickness before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present, play little role. Unexpectedly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of thermally excited Dirac-like electrons in the valley of the narrow gap Bi Sb alloy.
我们研究了BiSb/CoFeB异质结构中的电荷到自旋转换。溅射沉积异质结构的自旋霍尔电导率(SHC)在富Bi成分处呈现出一个高原区,对应于拓扑绝缘体相,随后对于更富Sb的合金,SHC下降,这与计算出的BiSb的本征自旋霍尔效应一致。在饱和之前,SHC随着BiSb厚度的增加而增加,这表明主要是合金的体相贡献了自旋电流的产生;如果存在拓扑表面态,其作用很小。出乎意料的是,发现SHC随着温度的升高而增加,遵循载流子密度的趋势。这些结果表明,室温下大的SHC,自旋霍尔效率超过1且具有极大的自旋电流迁移率,是由于窄带隙BiSb合金的谷中热激发的类狄拉克电子数量增加所致。