Kim Shin Sung, Bae Seunghwan, Jo Won Ho
Department of Materials Science and Engineering, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea.
Chem Commun (Camb). 2015 Dec 21;51(98):17413-6. doi: 10.1039/c5cc05253j.
Herein we report a simple n-doping method to enhance the performance of perovskite solar cells with a planar heterojunction structure. Devices with an n-doped PCBM electron transporting layer exhibit a power conversion efficiency of 13.8% with a remarkably enhanced short-circuit current of 22.0 mA cm(-2) as compared to the devices with an un-doped PCBM layer.
在此，我们报告一种简单的n型掺杂方法，以提高具有平面异质结结构的钙钛矿太阳能电池的性能。与具有未掺杂PCBM层的器件相比，具有n型掺杂PCBM电子传输层的器件表现出13.8%的功率转换效率，短路电流显著提高至22.0 mA cm(-2)。
