Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
Peking University Shenzhen SOC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen, 518051, China.
Nanoscale Res Lett. 2015 Dec;10(1):495. doi: 10.1186/s11671-015-1202-y. Epub 2015 Dec 26.
Due to the broad applications of porous alumina nanostructures, research on fabrication of anodized aluminum oxide (AAO) with nanoporous structure has triggered enormous attention. While fabrication of highly ordered nanoporous AAO with tunable geometric features has been widely reported, it is known that its growth rate can be easily affected by the fluctuation of process conditions such as acid concentration and temperature during electrochemical anodization process. To fabricate AAO with various geometric parameters, particularly, to realize precise control over pore depth for scientific research and commercial applications, a controllable fabrication process is essential. In this work, we revealed a linear correlation between the integrated electric charge flow throughout the circuit in the stable anodization process and the growth thickness of AAO membranes. With this understanding, we developed a facile approach to precisely control the growth process of the membranes. It was found that this approach is applicable in a large voltage range, and it may be extended to anodization of other metal materials such as Ti as well.
由于多孔氧化铝纳米结构的广泛应用，制备具有纳米多孔结构的阳极氧化铝（AAO）的研究引起了极大的关注。虽然具有可调几何特征的高度有序纳米多孔 AAO 的制备已经被广泛报道，但是众所周知，其生长速率很容易受到电化学阳极氧化过程中酸浓度和温度等工艺条件波动的影响。为了制备具有各种几何参数的 AAO，特别是为了实现科学研究和商业应用中对孔径深度的精确控制，可控的制备工艺是必不可少的。在这项工作中，我们揭示了在稳定阳极氧化过程中整个电路中的积分电荷量与 AAO 膜生长厚度之间的线性相关性。基于这一认识，我们开发了一种精确控制膜生长过程的简单方法。结果发现，这种方法在较大的电压范围内适用，并且可能扩展到钛等其他金属材料的阳极氧化。
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