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氮掺杂石墨炔在锂离子存储中的应用。

Nitrogen-Doped Graphdiyne Applied for Lithium-Ion Storage.

机构信息

Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences , No. 189 Songling Road, 266101 Qingdao, China.

University of Chinese Academy of Sciences , No. 19A Yuquan Road, 100049 Beijing, China.

出版信息

ACS Appl Mater Interfaces. 2016 Apr 6;8(13):8467-73. doi: 10.1021/acsami.6b00255. Epub 2016 Mar 25.

Abstract

The elemental N emerged uniformly in graphdiyne (GDY) after heat treatment under NH3 atmosphere to form N-doping GDY. The interplanar N-GDY distance decreased slightly, which may be ascribed to the smaller atom radius of N than C. Compared with GDY, the introduction of N atoms in N-GDY created numerous heteroatomic defects and active sites, thus achieving enhanced electrochemical properties, including higher reversible capacity, improved rate performance, and superior cycling stability. In addition, N-doping might be advantageous to minimize the surface side reactions and form stable interfaces, hence improving the electrochemical cycling stability of N-GDY electrodes. These results indicate N-doping is also an efficient way for improving the electrochemical performance of GDY materials.

摘要

经过氨气热处理,元素 N 均匀地出现在石墨炔 (GDY) 中,形成了 N 掺杂 GDY。层间 N-GDY 距离略有减小,这可能归因于 N 原子的原子半径小于 C 原子。与 GDY 相比,N 原子的引入在 N-GDY 中产生了许多杂原子缺陷和活性位点,从而实现了增强的电化学性能,包括更高的可逆容量、改善的倍率性能和优异的循环稳定性。此外,N 掺杂可能有利于最小化表面副反应并形成稳定的界面,从而提高 N-GDY 电极的电化学循环稳定性。这些结果表明,N 掺杂也是提高 GDY 材料电化学性能的有效方法。

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