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硒化铟:电子能带结构和表面激发态的深入研究。

Indium selenide: an insight into electronic band structure and surface excitations.

机构信息

Department of Physics, University of Calabria, via ponte Bucci, cubo 31/C, I-87036, Rende, Italy.

Fondazione Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, 16163, Genoa, Italy.

出版信息

Sci Rep. 2017 Jun 13;7(1):3445. doi: 10.1038/s41598-017-03186-x.

Abstract

We have investigated the electronic response of single crystals of indium selenide by means of angle-resolved photoemission spectroscopy, electron energy loss spectroscopy and density functional theory. The loss spectrum of indium selenide shows the direct free exciton at ~1.3 eV and several other peaks, which do not exhibit dispersion with the momentum. The joint analysis of the experimental band structure and the density of states indicates that spectral features in the loss function are strictly related to single-particle transitions. These excitations cannot be considered as fully coherent plasmons and they are damped even in the optical limit, i.e. for small momenta. The comparison of the calculated symmetry-projected density of states with electron energy loss spectra enables the assignment of the spectral features to transitions between specific electronic states. Furthermore, the effects of ambient gases on the band structure and on the loss function have been probed.

摘要

我们通过角分辨光电子能谱、电子能量损失谱和密度泛函理论研究了硒化铟单晶的电子响应。硒化铟的损失谱显示出在~1.3 eV 处的直接自由激子和几个其他不随动量色散的峰。实验能带结构和态密度的联合分析表明,损失函数中的谱特征与单粒子跃迁严格相关。这些激发不能被视为完全相干等离子体,即使在光学极限(即小动量)下也会被阻尼。计算的对称投影态密度与电子能量损失谱的比较使得能够将谱特征分配给特定电子态之间的跃迁。此外,还研究了环境气体对能带结构和损失函数的影响。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c550/5469805/948d879ef248/41598_2017_3186_Fig1_HTML.jpg

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