Li Kan, Pan Wei, Wang Jingyun, Pan Huayong, Huang Shaoyun, Xing Yingjie, Xu H Q
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, China.
Division of Solid State Physics, Lund University, Box 118, S-22100, Lund, Sweden.
Nanoscale Res Lett. 2016 Dec;11(1):222. doi: 10.1186/s11671-016-1443-4. Epub 2016 Apr 26.
We report on a simple but powerful approach to grow high material quality InSb and GaSb nanowires in a commonly used tube furnace setup. The approach employs a process of stable heating at a high temperature and then cooling down naturally to room temperature with the nanowire growth occurred effectively during the naturally cooling step. As-grown nanowires are analyzed using a scanning electron microscope and a transmission electron microscope equipped with an energy-dispersive X-ray spectroscopy setup. It is shown that the grown nanowires are several micrometers in lengths and are zincblende InSb and GaSb crystals. The FET devices are also fabricated with the grown nanowires and investigated. It is shown that the grown nanowires show good, desired electrical properties and should have potential applications in the future nanoelectronics and infrared optoelectronics.
我们报道了一种简单却强大的方法，可在常用的管式炉装置中生长出高质量的锑化铟（InSb）和锑化镓（GaSb）纳米线。该方法采用在高温下稳定加热，然后自然冷却至室温的过程，纳米线在自然冷却步骤中有效地生长。使用配备能量色散X射线光谱仪的扫描电子显微镜和透射电子显微镜对生长的纳米线进行分析。结果表明，生长的纳米线长度为几微米，是闪锌矿结构的InSb和GaSb晶体。还利用生长的纳米线制造了场效应晶体管（FET）器件并进行了研究。结果表明，生长的纳米线具有良好的、理想的电学性能，在未来的纳米电子学和红外光电子学中应有潜在应用。
