Gül Önder, van Woerkom David J, Weperen Ilse van, Car Diana, Plissard Sébastien R, Bakkers Erik P A M, Kouwenhoven Leo P
QuTech and Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft, The Netherlands.
Nanotechnology. 2015 May 29;26(21):215202. doi: 10.1088/0957-4484/26/21/215202. Epub 2015 May 6.
We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 K by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of [Formula: see text] cm(2) V(-1) s(-1). We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.
我们研究了锑化铟纳米线的低温电子迁移率。我们通过场效应输运测量，利用一个由具有接触电阻的纳米线晶体管组成的模型，提取了4.2K时的迁移率。该模型能够精确提取器件参数，从而可以对纳米线迁移率进行系统研究。我们确定了影响迁移率的因素，并通过优化获得了[公式：见原文]厘米²伏⁻¹秒⁻¹的场效应迁移率。我们进一步证明了这些迁移率值的可重复性，这些值是纳米线报道中最高的之一。我们的研究表明，迁移率目前受到分子吸附到纳米线表面和/或衬底的限制。
