State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, China.
School of Metallurgy and Environment, Central South University , Changsha 410083, China.
ACS Appl Mater Interfaces. 2016 Aug 10;8(31):20267-73. doi: 10.1021/acsami.6b04768. Epub 2016 Jul 27.
Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe2 films were less than three atomic layers thick and were single crystalline of MoSe2 over the entire GaN substrate. The ultrathin MoSe2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.
二维（2D）原子层状半导体对于下一代电子学和光电子学至关重要。在这里，我们设计了在晶格匹配的 GaN 半导体衬底上生长 MoSe2 原子层。结果表明，MoSe2 薄膜厚度小于三个原子层，并且整个 GaN 衬底上的 MoSe2 均为单晶。超薄 MoSe2/GaN 异质结二极管表现出约 850nm 的光发射，也可用于光伏应用。
