Department of Electrical and Computer Engineering, McGill University, Montreal, QC, H3A 0E9, Canada.
Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University, 1280 Main Street West, Hamilton, ON, L8S 4M1, Canada.
Adv Mater. 2016 Oct;28(38):8446-8454. doi: 10.1002/adma.201602645. Epub 2016 Aug 4.
Nearly dislocation-free semipolar AlGaN templates are achieved on c-plane sapphire substrate through controlled nanowire coalescence by selective-area epitaxy. The coalesced Mg-doped AlGaN layers exhibit superior charge-carrier-transport properties. Semipolar-AlGaN ultraviolet light-emitting diodes demonstrate excellent performance. This work establishes the use of engineered nanowire structures as a viable architecture to achieve large-area, dislocation-free planar photonic and electronic devices.
通过选择区域外延，在 c 面蓝宝石衬底上实现了近乎无位错的半极性 AlGaN 模板。合并后的 Mg 掺杂 AlGaN 层表现出优异的电荷载流子输运性能。半极性 AlGaN 紫外发光二极管表现出优异的性能。这项工作建立了使用工程化纳米线结构作为一种可行的架构，以实现大面积、无位错的平面光子和电子器件。
