通过分子束外延生长的全彩氮化铟镓/氮化铝镓纳米线微发光二极管：下一代微显示器的有前途的候选者。
Full-Color InGaN/AlGaN Nanowire Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy: A Promising Candidate for Next Generation Micro Displays.
作者信息
Bui Ha Quoc Thang, Velpula Ravi Teja, Jain Barsha, Aref Omar Hamed, Nguyen Hoang-Duy, Lenka Trupti Ranjan, Nguyen Hieu Pham Trung
机构信息
Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ 07102, USA.
Department of Biomedical Physics, Pham Ngoc Thach University of Medicine, Ho Chi Minh City 700000, Vietnam.
出版信息
Micromachines (Basel). 2019 Jul 24;10(8):492. doi: 10.3390/mi10080492.
We have demonstrated full-color and white-color micro light-emitting diodes (μLEDs) using InGaN/AlGaN core-shell nanowire heterostructures, grown on silicon substrate by molecular beam epitaxy. InGaN/AlGaN core-shell nanowire μLED arrays were fabricated with their wavelengths tunable from blue to red by controlling the indium composition in the device active regions. Moreover, our fabricated phosphor-free white-color μLEDs demonstrate strong and highly stable white-light emission with high color rendering index of ~ 94. The μLEDs are in circular shapes with the diameter varying from 30 to 100 μm. Such high-performance μLEDs are perfectly suitable for the next generation of high-resolution micro-display applications.
我们已经展示了使用通过分子束外延生长在硅衬底上的InGaN/AlGaN核壳纳米线异质结构制成的全彩和白色微发光二极管（μLED）。通过控制器件有源区中的铟成分，制备了波长可从蓝色调至红色的InGaN/AlGaN核壳纳米线μLED阵列。此外，我们制备的无荧光粉白色μLED表现出强烈且高度稳定的白光发射，显色指数高达约94。这些μLED为圆形，直径从30到100μm不等。这种高性能的μLED非常适合下一代高分辨率微显示应用。
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