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氧化石墨烯比例对氧化石墨烯包覆硅基底上细胞黏附与生长行为的影响。

Effect of graphene oxide ratio on the cell adhesion and growth behavior on a graphene oxide-coated silicon substrate.

作者信息

Jeong Jin-Tak, Choi Mun-Ki, Sim Yumin, Lim Jung-Taek, Kim Gil-Sung, Seong Maeng-Je, Hyung Jung-Hwan, Kim Keun Soo, Umar Ahmad, Lee Sang-Kwon

机构信息

Department of Physics, Chung-Ang University, Seoul 156-756, Republic of Korea.

Department of Semiconductor Science and Technology, Chonbuk National University, Jeonju 561-756, Republic of Korea.

出版信息

Sci Rep. 2016 Sep 22;6:33835. doi: 10.1038/srep33835.

Abstract

Control of living cells on biocompatible materials or on modified substrates is important for the development of bio-applications, including biosensors and implant biomaterials. The topography and hydrophobicity of substrates highly affect cell adhesion, growth, and cell growth kinetics, which is of great importance in bio-applications. Herein, we investigate the adhesion, growth, and morphology of cultured breast cancer cells on a silicon substrate, on which graphene oxides (GO) was partially formed. By minimizing the size and amount of the GO-containing solution and the further annealing process, GO-coated Si samples were prepared which partially covered the Si substrates. The coverage of GO on Si samples decreases upon annealing. The behaviors of cells cultured on two samples have been observed, i.e. partially GO-coated Si (P-GO) and annealed partially GO-coated Si (Annealed p-GO), with a different coverage of GO. Indeed, the spreading area covered by the cells and the number of cells for a given culture period in the incubator were highly dependent on the hydrophobicity and the presence of oxygenated groups on GO and Si substrates, suggesting hydrophobicity-driven cell growth. Thus, the presented method can be used to control the cell growth via an appropriate surface modification.

摘要

对生物相容性材料或改性基质上的活细胞进行控制,对于包括生物传感器和植入生物材料在内的生物应用的发展至关重要。基质的形貌和疏水性对细胞粘附、生长及细胞生长动力学有很大影响,这在生物应用中非常重要。在此,我们研究了培养的乳腺癌细胞在部分形成氧化石墨烯(GO)的硅基底上的粘附、生长和形态。通过最小化含GO溶液的体积和用量以及进一步的退火过程,制备了部分覆盖硅基底的GO包覆硅样品。退火后,GO在硅样品上的覆盖率降低。观察了在两种样品上培养的细胞行为,即部分GO包覆硅(P-GO)和退火后的部分GO包覆硅(退火后的P-GO),它们具有不同的GO覆盖率。实际上,在培养箱中给定培养期内细胞覆盖的铺展面积和细胞数量高度依赖于GO和硅基底上的疏水性及含氧基团的存在,表明疏水性驱动细胞生长。因此,所提出的方法可用于通过适当的表面改性来控制细胞生长。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bd55/5031981/f4cabf26b31a/srep33835-f1.jpg

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