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通过变迹正弦脉冲阳极氧化对纳米多孔阳极氧化铝光子晶体中的光学信号进行微调。

Fine tuning of optical signals in nanoporous anodic alumina photonic crystals by apodized sinusoidal pulse anodisation.

机构信息

School of Chemical Engineering, The University of Adelaide, Engineering North Building, 5005 Adelaide, Australia.

出版信息

Nanoscale. 2016 Nov 3;8(43):18360-18375. doi: 10.1039/c6nr06796d.

Abstract

In this study, we present an advanced nanofabrication approach to produce gradient-index photonic crystal structures based on nanoporous anodic alumina. An apodization strategy is for the first time applied to a sinusoidal pulse anodisation process in order to engineer the photonic stop band of nanoporous anodic alumina (NAA) in depth. Four apodization functions are explored, including linear positive, linear negative, logarithmic positive and logarithmic negative, with the aim of finely tuning the characteristic photonic stop band of these photonic crystal structures. We systematically analyse the effect of the amplitude difference (from 0.105 to 0.840 mA cm), the pore widening time (from 0 to 6 min), the anodisation period (from 650 to 950 s) and the anodisation time (from 15 to 30 h) on the quality and the position of the characteristic photonic stop band and the interferometric colour of these photonic crystal structures using the aforementioned apodization functions. Our results reveal that a logarithmic negative apodisation function is the most optimal approach to obtain unprecedented well-resolved and narrow photonic stop bands across the UV-visible-NIR spectrum of NAA-based gradient-index photonic crystals. Our study establishes a fully comprehensive rationale towards the development of unique NAA-based photonic crystal structures with finely engineered optical properties for advanced photonic devices such as ultra-sensitive optical sensors, selective optical filters and all-optical platforms for quantum computing.

摘要

在这项研究中,我们提出了一种先进的纳米制造方法,用于基于多孔阳极氧化铝(AAO)生产梯度指数光子晶体结构。首次将变迹策略应用于正弦脉冲阳极氧化工艺,以深度工程化多孔阳极氧化铝(AAO)的光子带隙。探索了四种变迹函数,包括线性正、线性负、对数正和对数负,目的是微调这些光子晶体结构的特征光子带隙。我们系统地分析了振幅差(从 0.105 到 0.840 mA cm)、扩孔时间(从 0 到 6 分钟)、阳极氧化周期(从 650 到 950 秒)和阳极氧化时间(从 15 到 30 小时)对使用上述变迹函数的这些光子晶体结构的特征光子带隙和干涉颜色的质量和位置的影响。我们的结果表明,对数负变迹函数是获得前所未有的、分辨率高且窄的 AAO 基梯度指数光子晶体在紫外-可见-近红外光谱范围内的光子带隙的最优化方法。我们的研究为开发具有精细工程光学特性的独特 AAO 基光子晶体结构奠定了基础,这些结构可用于先进的光子器件,如超灵敏光学传感器、选择性光学滤波器和全光学量子计算平台。

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