Institute of Electronic Devices, University of Wuppertal , Rainer-Gruenter-Strasse 21, 42119 Wuppertal, Germany.
SENTECH Instruments GmbH , Schwarzschildstrasse 2, 12489 Berlin, Germany.
ACS Appl Mater Interfaces. 2017 Feb 1;9(4):4171-4176. doi: 10.1021/acsami.6b13380. Epub 2017 Jan 23.
In this work, we report on aluminum oxide (AlO) gas permeation barriers prepared by spatial ALD (SALD) at atmospheric pressure. We compare the growth characteristics and layer properties using trimethylaluminum (TMA) in combination with an Ar/O remote atmospheric pressure plasma for different substrate velocities and different temperatures. The resulting AlO films show ultralow water vapor transmission rates (WVTR) on the order of 10 gmd. In notable contrast, plasma based layers already show good barrier properties at low deposition temperatures (75 °C), while water based processes require a growth temperature above 100 °C to achieve equally low WVTRs. The activation energy for the water permeation mechanism was determined to be 62 kJ/mol.
在这项工作中，我们报告了通过空间原子层沉积（SALD）在常压下制备的氧化铝（AlO）气体渗透屏障。我们比较了使用三甲基铝（TMA）结合 Ar/O 远程常压等离子体在不同的基底速度和不同温度下的生长特性和层性能。得到的 AlO 薄膜表现出超低的水蒸汽透过率（WVTR），约为 10 gmd。相比之下，基于等离子体的薄膜在低温（75°C）下已经显示出良好的阻隔性能，而基于水的工艺需要高于 100°C 的生长温度才能达到同样低的 WVTR。水渗透机制的活化能被确定为 62 kJ/mol。
