Sun Xiaojie, Chen Lanlan, Feng Wei
School of Materials Science and Engineering, Tianjin University, Tianjin 300350, China.
National Institute of Clean-and-Low-Carbon Energy, Beijing 102211, China.
Materials (Basel). 2024 Dec 8;17(23):6007. doi: 10.3390/ma17236007.
In this study, an inorganic multilayer barrier film was fabricated on the polyethylene naphthalate (PEN) substrate, which was composed of a SiO layer prepared by inductively coupled plasma chemical vapor deposition (ICP-CVD) and a AlO/ZnO nanolaminate produced by plasma-enhanced atomic layer deposition (PEALD). The multilayer composite film with a structure of 50 nm SiO + (4.5 nm AlO/6 nm ZnO) × 4 has excellent optical transmittance (88.1%) and extremely low water vapor permeability (3.3 × 10 g/m/day, 38 °C, 90% RH), indicating the cooperation of the two advanced film growth methods. The results suggest that the defects of the SiO layer prepared by ICP-CVD were effectively repaired by the PEALD layer, which has excellent defect coverage. And AlO/ZnO nanolaminates have advantages over single-layer AlO due to their complex diffusion pathways. The multilayer barrier film offers potential for encapsulating organic electronic devices that require a longer lifespan.
在本研究中，在聚萘二甲酸乙二醇酯（PEN）基板上制备了一种无机多层阻隔膜，该膜由通过电感耦合等离子体化学气相沉积（ICP-CVD）制备的SiO层和通过等离子体增强原子层沉积（PEALD）制备的AlO/ZnO纳米叠层组成。具有50 nm SiO + (4.5 nm AlO/6 nm ZnO) × 4结构的多层复合膜具有优异的光学透过率（88.1%）和极低的水蒸气透过率（3.3 × 10 g/m²/天，38 °C，90% RH），表明这两种先进的薄膜生长方法协同作用。结果表明，通过具有优异缺陷覆盖率的PEALD层有效地修复了通过ICP-CVD制备的SiO层的缺陷。并且AlO/ZnO纳米叠层由于其复杂的扩散路径，比单层AlO具有优势。这种多层阻隔膜为封装需要更长寿命的有机电子器件提供了潜力。
