Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea.
Nanotechnology. 2017 Apr 7;28(14):145702. doi: 10.1088/1361-6528/aa60f9. Epub 2017 Mar 9.
We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS) synthesized by chemical vapor deposition (CVD). A large number of trap states were produced during the CVD process of synthesizing MoS, resulting in a disordered monolayer MoS system. The interface trap density between CVD-grown MoS and silicon dioxide was extracted from the McWhorter surface noise model. Notably, generation-recombination noise which is attributed to charge trap states was observed at the low carrier density regime. The relation between the temperature and resistance following the power law of a 2D inverted-random void model supports the idea that disordered CVD-grown monolayer MoS can be analyzed using a percolation theory. This study can offer a viewpoint to interpret synthesized low-dimensional materials as highly disordered systems.
我们研究了通过化学气相沉积（CVD）合成的二维（2D）单层二硫化钼（MoS）的电流-电压和噪声特性。在 CVD 合成 MoS 的过程中会产生大量的陷阶态，导致单层 MoS 系统无序。通过 McWhorter 表面噪声模型提取了 CVD 生长的 MoS 与二氧化硅之间的界面陷阱密度。值得注意的是，在低载流子密度区域观察到了归因于电荷陷阶态的产生-复合噪声。遵循二维倒易空穴模型幂律关系的温度与电阻之间的关系支持这样一种观点，即无序的 CVD 生长单层 MoS 可以用渗流理论来分析。本研究可以提供一种观点来解释作为高度无序系统的合成低维材料。
