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CVD 生长的单层 MoS 场效应晶体管的环境效应对其电学特性的影响。

Ambient effects on electrical characteristics of CVD-grown monolayer MoS field-effect transistors.

机构信息

Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania, 19104, United States.

Department of Electronic Engineering, Kwangwoon University, Seoul, 01897, South Korea.

出版信息

Sci Rep. 2017 Jun 22;7(1):4075. doi: 10.1038/s41598-017-04350-z.

Abstract

Monolayer materials are sensitive to their environment because all of the atoms are at their surface. We investigate how exposure to the environment affects the electrical properties of CVD-grown monolayer MoS by monitoring electrical parameters of MoS field-effect transistors as their environment is changed from atmosphere to high vacuum. The mobility increases and contact resistance decreases simultaneously as either the pressure is reduced or the sample is annealed in vacuum. We see a previously unobserved, non-monotonic change in threshold voltage with decreasing pressure. This result could be explained by charge transfer on the MoS channel and Schottky contact formation due to adsorbates at the interface between the gold contacts and MoS. Additionally, from our electrical measurements it is plausible to infer that at room temperature and pressure water and oxygen molecules adsorbed on the surface act as interface traps and scattering centers with a density of several 10 cm eV, degrading the electrical properties of monolayer MoS.

摘要

单层材料对其环境非常敏感,因为所有原子都在其表面。我们通过监测 CVD 生长的单层 MoS 场效应晶体管的电参数,研究了暴露于环境中如何影响其电学性能,这些参数是在从大气到高真空的环境变化下测量的。当压力降低或样品在真空中退火时,迁移率增加,接触电阻同时降低。我们观察到了一个以前未观察到的、非单调的随着压力降低而变化的阈值电压。这一结果可以通过 MoS 沟道上的电荷转移和肖特基接触形成来解释,这是由于金接触和 MoS 之间的界面上的吸附物造成的。此外,从我们的电测量中可以合理地推断,在室温下和压力下,吸附在表面上的水分子和氧分子作为界面陷阱和散射中心,其密度约为几个 10 cm eV,从而降低了单层 MoS 的电学性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a414/5481332/ac636dd2fabe/41598_2017_4350_Fig1_HTML.jpg

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