Chen Chih-Cheng, Wang Fang-Hsing, Chang Sheng-Cheng, Yang Cheng-Fu
School of Information Engineering, Jimei University, Xiamen 361021, China.
Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 402, Taiwan.
Materials (Basel). 2018 Aug 22;11(9):1501. doi: 10.3390/ma11091501.
In this study, a radio frequency magnetron sputtering process was used to deposit F-doped ZnO (FZO) films on polyimide (PI) substrates. The thermal expansion effect of PI substrates induces distortion and bending, causing FZO films to peel and their electrical properties and crystallinity to deteriorate. To address these shortcomings, oxygen (O₂) plasma was used to pretreat the surface of PI substrates using a plasma-enhanced chemical vapor deposition system before the FZO films were deposited. The effects of O₂ plasma pretreatment time on the surface water contact angle, surface morphologies, and optical properties of the PI substrates were investigated. As the pretreatment time increased, so did the roughness of the PI substrates. After the FZO films had been deposited on the PI substrates, variations in the surface morphologies, crystalline structure, composition, electrical properties, and optical properties were investigated as a function of the O₂ plasma pretreatment time. When this was 30 s, the FZO films had optimal optical and electrical properties. The resistivity was 3.153 × 10 Ω-cm, and the transmittance ratios of all films were greater than 90%. The X-ray photoelectron spectroscopy spectra of the FZO films, particularly the peaks for O, Zn 2p, and Zn 2p, were determined for films with O₂ plasma pretreatment times of 0 and 30 s. Finally, a HCl solution was used to etch the surfaces of the deposited FZO films, and silicon-based thin-film solar cells were fabricated on the FZO/PI substrates. The effect of O₂-plasma pretreatment time on the properties of the fabricated solar cells is thoroughly discussed.
在本研究中，采用射频磁控溅射工艺在聚酰亚胺（PI）衬底上沉积氟掺杂氧化锌（FZO）薄膜。PI衬底的热膨胀效应会导致变形和弯曲，使FZO薄膜剥离，其电学性能和结晶度也会变差。为解决这些缺点，在沉积FZO薄膜之前，使用氧（O₂）等离子体通过等离子体增强化学气相沉积系统对PI衬底表面进行预处理。研究了O₂等离子体预处理时间对PI衬底表面水接触角、表面形貌和光学性能的影响。随着预处理时间的增加，PI衬底的粗糙度也随之增加。在PI衬底上沉积FZO薄膜后，研究了表面形貌、晶体结构、成分、电学性能和光学性能随O₂等离子体预处理时间的变化。当预处理时间为30 s时，FZO薄膜具有最佳的光学和电学性能。电阻率为3.153×10Ω·cm，所有薄膜的透过率均大于90%。测定了O₂等离子体预处理时间为0和30 s的FZO薄膜的X射线光电子能谱，特别是O、Zn 2p和Zn 2p的峰。最后，用盐酸溶液蚀刻沉积的FZO薄膜表面，并在FZO/PI衬底上制备了硅基薄膜太阳能电池。深入讨论了O₂等离子体预处理时间对所制备太阳能电池性能的影响。
