Department of Electrical and Computer Engineering, ‡Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University , Richmond, Virginia 23284, United States.
Nano Lett. 2017 Jun 14;17(6):3478-3484. doi: 10.1021/acs.nanolett.7b00439. Epub 2017 Jun 1.
Rotating the magnetization of a shape anisotropic magnetostrictive nanomagnet with voltage-generated stress/strain dissipates much less energy than most other magnetization rotation schemes, but its application to writing bits in nonvolatile magnetic memory has been hindered by the fundamental inability of stress/strain to rotate magnetization by full 180°. Normally, stress/strain can rotate the magnetization of a shape anisotropic elliptical nanomagnet by only up to 90°, resulting in incomplete magnetization reversal. Recently, we predicted that applying uniaxial stress sequentially along two different axes that are not collinear with the major or minor axis of the elliptical nanomagnet will rotate the magnetization by full 180°. Here, we demonstrate this complete 180° rotation in elliptical Co nanomagnets (fabricated on a piezoelectric substrate) at room temperature. The two stresses are generated by sequentially applying voltages to two pairs of shorted electrodes placed on the substrate such that the line joining the centers of the electrodes in one pair intersects the major axis of a nanomagnet at ∼ +30° and the line joining the centers of the electrodes in the other pair intersects at ∼ -30°. A finite element analysis has been performed to determine the stress distribution underneath the nanomagnets when one or both pairs of electrodes are activated, and this has been approximately incorporated into a micromagnetic simulation of magnetization dynamics to confirm that the generated stress can produce the observed magnetization rotations. This result portends an extremely energy-efficient nonvolatile "straintronic" memory technology predicated on writing bits in nanomagnets with electrically generated stress.
利用电压产生的应力/应变来旋转形状各向异性磁致伸缩纳米磁体的磁化比大多数其他磁化旋转方案消耗的能量要少得多,但由于应力/应变根本无法将磁化完全旋转 180°,因此其在非易失性磁存储器中的写入位的应用受到了阻碍。通常,应力/应变只能将形状各向异性的椭圆形纳米磁体的磁化旋转高达 90°,导致磁化反转不完全。最近,我们预测,沿与椭圆纳米磁体的长轴或短轴不共线的两个不同轴依次施加单轴应力,将使磁化完全旋转 180°。在这里,我们在室温下演示了在椭圆 Co 纳米磁体(在压电衬底上制造)中实现这种完全 180°的旋转。这两个应力是通过依次向放置在衬底上的两对短接电极施加电压产生的,使得一对电极中心之间的连线与纳米磁体的长轴相交于约 +30°,而另一对电极中心之间的连线相交于约 -30°。已经进行了有限元分析以确定当一对或两对电极被激活时纳米磁体下方的应力分布,并将其大致纳入了磁化动力学的微磁模拟中,以确认产生的应力可以产生观察到的磁化旋转。这一结果预示着一种极其节能的非易失性“应变电子”存储技术,其基础是用电生成的应力在纳米磁体中写入位。