Department of Electrical and Information Technology, Lund University , Lund 221 00, Sweden.
Center for Analysis and Synthesis, Lund University , Box 124, 221 00 Lund, Sweden.
Nano Lett. 2017 Jul 12;17(7):4373-4380. doi: 10.1021/acs.nanolett.7b01455. Epub 2017 Jun 15.
Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/InGaAsSb/GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III-V TunnelFETs to the next level.
隧穿场效应晶体管（TunnelFET）作为一种领先的陡峭斜率晶体管候选者，仍然受到缺陷响应的困扰，并且测量和模拟器件性能之间存在很大差异。在这项工作中，制造并表征了具有在技术相关电流下低于 60 mV/decade 良好工作能力的高度缩放的 InAs/InGaAsSb/GaSb 垂直纳米线隧穿场效应晶体管。使用透射电子显微镜对结构、组成和应变进行了表征，重点研究了异质结。使用技术计算机辅助设计（TCAD）模拟和随机电报信号（RTS）噪声测量研究了不同类型缺陷的影响。研究表明，体缺陷对这些器件的性能影响最大，尽管对于这些高度缩放的器件，即使与少量氧化物缺陷的相互作用也会对性能产生重大影响。如本函所述，了解单个缺陷的贡献对于验证器件工作的基本物理原理至关重要，因此对于将 III-V 隧穿场效应晶体管提升到一个新的水平是必要的。
