Department of Electrical and Information Technology, Lund University, 221 00, Lund, Sweden.
Nat Commun. 2023 May 3;14(1):2530. doi: 10.1038/s41467-023-38242-w.
Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications. Here, we demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) that can modulate an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing with significant suppression of undesired harmonics for reconfigurable analogue applications. We realize this by a heterostructure design in which a gate/source overlapped channel enables nearly perfect parabolic transfer characteristics with robust negative transconductance. By using a ferroelectric gate oxide, our ferro-TFET is non-volatilely reconfigurable, enabling various modes of signal modulation. The ferro-TFET shows merits of reconfigurability, reduced footprint, and low supply voltage for signal modulation. This work provides the possibility for monolithic integration of both steep-slope TFETs and reconfigurable ferro-TFETs towards high-density, energy-efficient, and multifunctional digital/analogue hybrid circuits.
可重构晶体管是一种新兴的器件技术，它在降低电路架构复杂性的同时增加了新的功能。然而，大多数研究都集中在数字应用上。在这里，我们展示了一种单一的垂直纳米线铁电隧道场效应晶体管（铁电 TFET），它可以通过多种模式调制输入信号，包括信号传输、相移、倍频和混频，并显著抑制不需要的谐波，从而实现可重构模拟应用。我们通过一种异质结构设计实现了这一点，其中栅极/源极重叠的通道使接近完美的抛物线传输特性具有稳健的负跨导。通过使用铁电栅氧化层，我们的铁电 TFET 是可非易失性重构的，能够实现各种信号调制模式。铁电 TFET 具有可重构性、小尺寸和低电源电压的优点，适用于信号调制。这项工作为陡峭斜率 TFET 和可重构铁电 TFET 的单片集成提供了可能性，从而实现高密度、高能效和多功能的数字/模拟混合电路。
