Wang Qian, Han Lihong, Wu Liyuan, Zhang Tao, Li Shanjun, Lu Pengfei
State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing, 100876, China.
College of Electrical Engineering and Information Technology, Sichuan University, Chengdu, 610065, China.
Nanoscale Res Lett. 2019 Aug 19;14(1):287. doi: 10.1186/s11671-019-3113-9.
Strain engineering is a practical method to tune and improve the physical characteristics and properties of two-dimensional materials, due to their large stretchability. Tensile strain dependence of electronic, phonon, and thermoelectric properties of InSe monolayer are systematically studied. We demonstrate that the lattice thermal conductivity can be effectively modulated by applying tensile strain. Tensile strain can enhance anharmonic phonon scattering, giving rise to the enhanced phonon scattering rate, reduced phonon group velocity and heat capacity, and therefore lattice thermal conductivity decreases from 25.9 to 13.1 W/mK when the strain of 6% is applied. The enhanced figure of merit indicates that tensile strain is an effective way to improve the thermoelectric performance of InSe monolayer.
由于二维材料具有较大的拉伸性，应变工程是一种调节和改善其物理特性与性能的实用方法。本文系统研究了InSe单层的电子、声子和热电性质对拉伸应变的依赖性。我们证明，通过施加拉伸应变可以有效地调制晶格热导率。拉伸应变可增强非谐声子散射，导致声子散射率提高、声子群速度和热容量降低，因此当施加6%的应变时，晶格热导率从25.9 W/mK降至13.1 W/mK。优值的提高表明拉伸应变是提高InSe单层热电性能的有效途径。
