Magari Yusaku, Kataoka Taiki, Yeh Wenchang, Furuta Mamoru
Graduate School of Natural Science and Technology, Shimane University, Matsue, Shimane, 690-8504, Japan.
School of Environmental Science and Engineering, Kochi University of Technology, Kami, Kochi, 782-8502, Japan.
Nat Commun. 2022 Feb 28;13(1):1078. doi: 10.1038/s41467-022-28480-9.
Oxide semiconductors have been extensively studied as active channel layers of thin-film transistors (TFTs) for electronic applications. However, the field-effect mobility (μ) of oxide TFTs is not sufficiently high to compete with that of low-temperature-processed polycrystalline-Si TFTs (50-100 cmVs). Here, we propose a simple process to obtain high-performance TFTs, namely hydrogenated polycrystalline InO (InO:H) TFTs grown via the low-temperature solid-phase crystallization (SPC) process. InO:H TFTs fabricated at 300 °C exhibit superior switching properties with µ = 139.2 cmVs, a subthreshold swing of 0.19 Vdec, and a threshold voltage of 0.2 V. The hydrogen introduced during sputter deposition plays an important role in enlarging the grain size and decreasing the subgap defects in SPC-prepared InO:H. The proposed method does not require any additional expensive equipment and/or change in the conventional oxide TFT fabrication process. We believe these SPC-grown InO:H TFTs have a great potential for use in future transparent or flexible electronics applications.
氧化物半导体作为电子应用中薄膜晶体管（TFT）的有源沟道层已得到广泛研究。然而，氧化物TFT的场效应迁移率（μ）不够高，无法与低温处理的多晶硅TFT（50 - 100 cm²V⁻¹s⁻¹）竞争。在此，我们提出一种简单的工艺来制备高性能TFT，即通过低温固相结晶（SPC）工艺生长氢化多晶InO（InO:H）TFT。在300°C制备的InO:H TFT表现出优异的开关特性，μ = 139.2 cm²V⁻¹s⁻¹，亚阈值摆幅为0.19 V/dec，阈值电压为0.2 V。溅射沉积过程中引入的氢在扩大SPC制备的InO:H的晶粒尺寸和减少亚带隙缺陷方面起着重要作用。所提出的方法不需要任何额外的昂贵设备和/或改变传统的氧化物TFT制造工艺。我们相信这些SPC生长的InO:H TFT在未来透明或柔性电子应用中具有巨大的应用潜力。
