Lin Tiegui, Wang Jian, Liu Gang, Wang Langping, Wang Xiaofeng, Zhang Yufen
State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China.
School of Electrical and Electronic Engineering, North China Electric Power University, Beijing 102206, China.
Materials (Basel). 2017 Jun 9;10(6):633. doi: 10.3390/ma10060633.
To fabricate high-quality polycrystalline VO₂ thin film with a metal-insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO₂ films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO₂ film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.
为了制备金属-绝缘体转变（MIT）温度低于50°C的高质量多晶VO₂薄膜，本研究采用了不同放电电流的高功率脉冲磁控溅射法。用四点探针电阻率测量系统、可见-近红外（IR）透射光谱、X射线衍射（XRD）、X射线光电子能谱（XPS）和扫描电子显微镜对沉积态的VO₂薄膜进行了表征。电阻率结果表明，所有沉积态薄膜在相变过程中都有较大的电阻变化，且MIT温度随放电电流的增加而降低，在此过程中，诸如电阻和透射率变化等相变特性几乎没有恶化。此外，不同温度下的XRD图谱显示，VO₂薄膜在MIT过程中存在一些反向变形，且有大量择优结晶取向。MIT温度降低而相变特性几乎没有恶化可归因于择优晶粒取向的减少。
