National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Sci Rep. 2017 Aug 10;7(1):7830. doi: 10.1038/s41598-017-08280-8.
Two dimensional (2D) molecular crystals have attracted considerable attention because of their promising potential in electrical device applications, such as high-performance field-effect transistors (FETs). However, such devices demand high voltages, thereby considerably increasing power consumption. This study demonstrates the fabrication of organic FETs based on 2D crystalline films as semiconducting channels. The application of high-κ oxide dielectrics allows the transistors run under a low operating voltage (-4 V). The devices exhibited a high electrical performance with a carrier mobility up to 9.8 cm V s. Further results show that the AlO layer is beneficial to the charge transport at the conducting channels of FETs. Thus, the device strategy presented in this work is favorable for 2D molecular crystal-based transistors that can operate under low voltages.
二维（2D）分子晶体因其在电子器件应用中的巨大潜力而受到广泛关注，例如高性能场效应晶体管（FET）。然而，这些器件需要高电压，从而大大增加了功耗。本研究展示了基于二维晶体薄膜作为半导体沟道的有机 FET 的制造。高κ氧化物电介质的应用使得晶体管可以在低工作电压（-4V）下运行。这些器件表现出了高达 9.8cm^2V^-1s^-1 的载流子迁移率，具有优异的电学性能。进一步的结果表明，AlO 层有利于 FET 沟道中的电荷输运。因此，本工作中提出的器件策略有利于在低电压下工作的基于 2D 分子晶体的晶体管。
