Department of Electrical and Computer Engineering, Marquette University, Milwaukee, WI, USA.
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY, USA.
Sci Rep. 2017 Aug 18;7(1):8811. doi: 10.1038/s41598-017-08967-y.
Micro-fabricated single-layer graphenes (SLGs) on a silicon dioxide (SiO)/Si substrate, a silicon nitride (SiN) membrane, and a suspended architecture are presented for their use as temperature sensors. These graphene temperature sensors act as resistance temperature detectors, showing a quadratic dependence of resistance on the temperature in a range between 283 K and 303 K. The observed resistance change of the graphene temperature sensors are explained by the temperature dependent electron mobility relationship (~T) and electron-phonon scattering. By analyzing the transient response of the SLG temperature sensors on different substrates, it is found that the graphene sensor on the SiN membrane shows the highest sensitivity due to low thermal mass, while the sensor on SiO/Si reveals the lowest one. Also, the graphene on the SiN membrane reveals not only the fastest response, but also better mechanical stability compared to the suspended graphene sensor. Therefore, the presented results show that the temperature sensors based on SLG with an extremely low thermal mass can be used in various applications requiring high sensitivity and fast operation.
微制造的单层石墨烯（SLG）分别位于二氧化硅（SiO）/硅基底、氮化硅（SiN）膜和悬浮结构上，可作为温度传感器使用。这些石墨烯温度传感器作为电阻温度探测器，在 283 K 到 303 K 的范围内，其电阻与温度呈二次函数关系。通过分析不同衬底上 SLG 温度传感器的瞬态响应，发现由于热质量低，氮化硅膜上的石墨烯传感器具有最高的灵敏度，而 SiO/Si 上的传感器则具有最低的灵敏度。此外，与悬浮石墨烯传感器相比，氮化硅膜上的石墨烯不仅具有最快的响应速度，而且还具有更好的机械稳定性。因此，所呈现的结果表明，基于具有极低热质量的 SLG 的温度传感器可以应用于需要高灵敏度和快速操作的各种应用中。
