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π-扩展异吲哚衍生物:用于聚合物半导体的有前途的缺电子构筑块。

π-Extended Isoindigo-Based Derivative: A Promising Electron-Deficient Building Block for Polymer Semiconductors.

机构信息

College of Chemistry and Chemical Engineering, and Key Laboratory for Large-format Battery Materials and System, Ministry of Education, Hubei Key Laboratory of Material Chemistry and Service Failure, Huazhong University of Science and Technology , Wuhan 430074, China.

Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.

出版信息

ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40549-40555. doi: 10.1021/acsami.7b13570. Epub 2017 Nov 7.

Abstract

The exploration of novel electron-deficient building blocks is a key task for developing high-performance polymer semiconductors in organic thin-film transistors. In view of the situation of the lack of strong electron-deficient building blocks, we designed two novel π-extended isoindigo-based electron-deficient building blocks, IVI and FIVI. Owing to the strong electron-deficient nature and the extended π-conjugated system of the two acceptor units, their copolymers, PIVI2T and PFIVI2T, containing 2,2'-bithiophene donor units, are endowed with deep-lying highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) energy levels and strong intermolecular interactions. In comparison to PIVI2T, the fluorinated PFIVI2T exhibits stronger intra- and intermolecular interactions, lower HOMO/LUMO energy levels up to -5.74/-4.17 eV, and more ordered molecular packing with a smaller π-π stacking distance of up to 3.53 Å, resulting in an excellent ambipolar transporting behavior and a promising application in logic circuits for PFIVI2T in ambient with hole and electron mobilities of up to 1.03 and 1.82 cm V s, respectively. The results reveal that FIVI is a promising and strong electron-deficient building unit to construct high-performance semiconducting polymers, which provides an insight into the structure-property relationships for the exploration and molecular engineering of excellent electron-deficient building blocks in the field of organic electronics.

摘要

探索新型缺电子构筑单元对于开发高性能聚合物半导体在有机薄膜晶体管中具有重要意义。鉴于强缺电子构筑单元的缺乏,我们设计了两种新型π-扩展的茚并二酮基缺电子构筑单元 IVI 和 FIVI。由于两个受体单元具有很强的缺电子性质和扩展的π-共轭体系,它们的共聚物 PIVI2T 和 PFIVI2T 含有 2,2'-联噻吩给体单元,具有较深的最高占据分子轨道(HOMO)/最低未占据分子轨道(LUMO)能级和较强的分子间相互作用。与 PIVI2T 相比,氟化的 PFIVI2T 表现出更强的分子内和分子间相互作用、更低的 HOMO/LUMO 能级低至-5.74/-4.17 eV,以及更有序的分子堆积,π-π 堆积距离小至 3.53 Å,这导致了出色的双极性输运性能,并有望在逻辑电路中应用于 PFIVI2T,其在环境中的空穴和电子迁移率分别高达 1.03 和 1.82 cm V s。结果表明,FIVI 是一种很有前途和强的缺电子构筑单元,可用于构建高性能半导体聚合物,这为探索和分子工程在有机电子领域具有优异的缺电子构筑单元提供了结构-性能关系的深入了解。

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