Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA.
Nanoscale. 2017 Dec 14;9(48):19108-19113. doi: 10.1039/c7nr05069k.
Based on the careful design of two-terminal devices from multi-layer transition metal dichalcogenides (TMDs) such as MoS and WSe, truly vertical transport has been experimentally evaluated and theoretically analyzed. By exploring, the electric field and temperature dependence of in total 28 TMD devices of various thicknesses, a model that describes vertical transport as Fowler Nordheim mediated at high electric fields and thermal injection dominated at low fields has been developed. Our approach is similar to the description chosen to capture gate leakage current levels through amorphous materials such as SiO. Employing our quantitative analysis, an effective vertical transport mass of m*/m (MoS) ≈ 0.18 and m*/m (WSe) ≈ 0.14 has been extracted for the first time and barriers at the metal contact-to-TMD interface of heights similar to those extracted for lateral transport in TMD transistors have been confirmed.
基于多层过渡金属二卤化物（TMD）如 MoS 和 WSe 的两端器件的精心设计，已经进行了真正垂直传输的实验评估和理论分析。通过探索总共 28 种不同厚度 TMD 器件的电场和温度依赖性，已经开发出一种模型，该模型将垂直传输描述为在高电场下由 Fowler-Nordheim 介导，在低场下由热注入主导。我们的方法类似于选择来捕获通过非晶材料（如 SiO）的栅极漏电流水平的描述。通过我们的定量分析，首次提取出有效的垂直传输质量 m* / m（MoS）≈0.18 和 m* / m（WSe）≈0.14，并且确认了金属接触-TMD 界面处的势垒与从 TMD 晶体管中提取的横向传输的势垒相似。
