Resolving the spin splitting in the conduction band of monolayer MoS.

Time-reversal symmetry and broken spin degeneracy enable the exploration of spin and valley quantum degrees of freedom in monolayer transition-metal dichalcogenides. While the strength of the large spin splitting in the valance band of these materials is now well-known, probing the 10-100 times smaller splitting in the conduction band poses significant challenges. Since it is easier to achieve n-type conduction in most of them, resolving the energy levels in the conduction band is crucial for the prospect of developing new spintronic and valleytronic devices. Here, we study quantum transport in high mobility monolayer MoS devices where we observe well-developed quantized conductance in multiples of e /h in zero magnetic field. We extract a sub-band spacing energy of 0.8 meV. The application of a magnetic field gradually increases the interband spacing due to the valley-Zeeman effect. Here, we extract a g-factor of ~2.16 in the conduction band of monolayer MoS.