采用AlO电介质对二维过渡金属二硫属化物进行载流子控制。
Carrier control in 2D transition metal dichalcogenides with AlO dielectric.
作者信息
Lau Chit Siong, Chee Jing Yee, Thian Dickson, Kawai Hiroyo, Deng Jie, Wong Swee Liang, Ooi Zi En, Lim Yee-Fun, Goh Kuan Eng Johnson
机构信息
Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore.
Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore, 138632, Singapore.
出版信息
Sci Rep. 2019 Jun 19;9(1):8769. doi: 10.1038/s41598-019-45392-9.
We report transport measurements of dual gated MoS and WSe devices using atomic layer deposition grown AlO as gate dielectrics. We are able to achieve current pinch-off using independent split gates and observe current steps suggesting possible carrier confinement. We also investigated the impact of gate geometry and used electrostatic potential simulations to explain the observed device physics.
我们报告了使用原子层沉积生长的AlO作为栅极电介质的双栅极MoS和WSe器件的输运测量结果。我们能够通过独立的分裂栅极实现电流夹断，并观察到表明可能存在载流子限制的电流台阶。我们还研究了栅极几何形状的影响，并使用静电势模拟来解释观察到的器件物理现象。
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