Suominen H J, Kjaergaard M, Hamilton A R, Shabani J, Palmstrøm C J, Marcus C M, Nichele F
Center for Quantum Devices and Station Q Copenhagen, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen, Denmark.
School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia.
Phys Rev Lett. 2017 Oct 27;119(17):176805. doi: 10.1103/PhysRevLett.119.176805. Epub 2017 Oct 26.
We investigate zero-bias conductance peaks that arise from coalescing subgap Andreev states, consistent with emerging Majorana zero modes, in hybrid semiconductor-superconductor wires defined in a two-dimensional InAs/Al heterostructure using top-down lithography and gating. The measurements indicate a hard superconducting gap, ballistic tunneling contact, and in-plane critical fields up to 3 T. Top-down lithography allows complex geometries, branched structures, and straightforward scaling to multicomponent devices compared to structures made from assembled nanowires.
我们研究了在通过自上而下光刻和栅极技术定义的二维InAs/Al异质结构中的混合半导体-超导线中,由合并的亚间隙安德列夫态产生的零偏置电导峰,这与新兴的马约拉纳零模一致。测量结果表明存在硬超导能隙、弹道隧穿接触以及高达3 T的面内临界场。与由组装纳米线制成的结构相比,自上而下光刻允许实现复杂的几何形状、分支结构以及直接扩展到多组件器件。