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用于体内心理生理状况监测的高度集成的 MEMS-ASIC 感测系统。

Highly Integrated MEMS-ASIC Sensing System for Intracorporeal Physiological Condition Monitoring.

机构信息

State Key Laboratory of Transducer Technology, Institute of Electronics, Chinese Academy of Sciences, Beijing 100190, China.

School of Electronic, Electrical, and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100190, China.

出版信息

Sensors (Basel). 2018 Jan 2;18(1):107. doi: 10.3390/s18010107.

Abstract

In this paper, a highly monolithic-integrated multi-modality sensor is proposed for intracorporeal monitoring. The single-chip sensor consists of a solid-state based temperature sensor, a capacitive based pressure sensor, and an electrochemical oxygen sensor with their respective interface application-specific integrated circuits (ASICs). The solid-state-based temperature sensor and the interface ASICs were first designed and fabricated based on a 0.18-μm 1.8-V CMOS (complementary metal-oxide-semiconductor) process. The oxygen sensor and pressure sensor were fabricated by the standard CMOS process and subsequent CMOS-compatible MEMS (micro-electromechanical systems) post-processing. The multi-sensor single chip was completely sealed by the nafion, parylene, and PDMS (polydimethylsiloxane) layers for biocompatibility study. The size of the compact sensor chip is only 3.65 mm × 1.65 mm × 0.72 mm. The functionality, stability, and sensitivity of the multi-functional sensor was tested ex vivo. Cytotoxicity assessment was performed to verify that the bio-compatibility of the device is conforming to the ISO 10993-5:2009 standards. The measured sensitivities of the sensors for the temperature, pressure, and oxygen concentration are 10.2 mV/°C, 5.58 mV/kPa, and 20 mV·L/mg, respectively. The measurement results show that the proposed multi-sensor single chip is suitable to sense the temperature, pressure, and oxygen concentration of human tissues for intracorporeal physiological condition monitoring.

摘要

本文提出了一种高度单片集成的多模态传感器,用于体腔内监测。该单芯片传感器由基于固态的温度传感器、基于电容的压力传感器和带有各自接口专用集成电路(ASIC)的电化学氧传感器组成。基于 0.18-μm 1.8-V CMOS(互补金属氧化物半导体)工艺,首先设计和制造了基于固态的温度传感器和接口 ASIC。氧传感器和压力传感器通过标准 CMOS 工艺制造,并随后通过与 CMOS 兼容的微机电系统(MEMS)后处理制造。多传感器单芯片完全用纳滤膜、聚对二甲苯和 PDMS(聚二甲基硅氧烷)层密封,以进行生物相容性研究。紧凑传感器芯片的尺寸仅为 3.65mm×1.65mm×0.72mm。对多功能传感器的功能、稳定性和灵敏度进行了离体测试。进行细胞毒性评估以验证该装置的生物相容性符合 ISO 10993-5:2009 标准。传感器对温度、压力和氧浓度的测量灵敏度分别为 10.2 mV/°C、5.58 mV/kPa 和 20 mV·L/mg。测量结果表明,所提出的多传感器单芯片适用于感测人体组织的温度、压力和氧浓度,以进行体腔内生理状况监测。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/da7c/5795372/6fc274e5bbf1/sensors-18-00107-g001.jpg

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