基于 Al₂O₃ 的 a-IGZO 肖特基二极管用于温度传感。

Al₂O₃-Based a-IGZO Schottky Diodes for Temperature Sensing.

机构信息

Key Laboratory of Instrumentation Science & Dynamic Measurement, Ministry of Education, North University of China, Tai Yuan 030051, China.

Science and Technology on Electronic Test and Measurement Laboratory, North University of China, Tai Yuan 030051, China.

出版信息

Sensors (Basel). 2019 Jan 9;19(2):224. doi: 10.3390/s19020224.

DOI:10.3390/s19020224

PMID:30634474

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6359250/

Abstract

High-temperature electronic devices and sensors that operate in harsh environments, especially high-temperature environments, have attracted widespread attention. An Al₂O₃ based a-IGZO (amorphous indium-gallium-zinc-oxide) Schottky diode sensor is proposed. The diodes are tested at 21⁻400 °C, and the design and fabrication process of the Schottky diodes and the testing methods are introduced. Herein, a series of factors influencing diode performance are studied to obtain the relationship between diode ideal factor , the barrier height Ф, and temperature. The sensitivity of the diode sensors is 0.81 mV/°C, 1.37 mV/°C, and 1.59 mV/°C when the forward current density of the diode is 1 × 10 A/cm², 1 × 10 A/cm², and 1 × 10 A/cm², respectively.

摘要

工作在恶劣环境，尤其是高温环境中的高温电子器件和传感器受到了广泛关注。提出了一种基于 Al₂O₃ 的 a-IGZO（非晶态铟镓锌氧化物）肖特基二极管传感器。在 21⁻400°C 下对二极管进行了测试，并介绍了肖特基二极管的设计和制造工艺以及测试方法。在此，研究了一系列影响二极管性能的因素，以获得二极管理想因子、势垒高度 Ф 与温度之间的关系。当二极管的正向电流密度分别为 1 × 10 A/cm²、1 × 10 A/cm²和 1 × 10 A/cm²时，二极管传感器的灵敏度分别为 0.81 mV/°C、1.37 mV/°C和 1.59 mV/°C。