Institute of Physics and Applied Physics, Yonsei University , Seoul 120-749, Korea.
ACS Appl Mater Interfaces. 2018 Jan 31;10(4):4206-4212. doi: 10.1021/acsami.7b15863. Epub 2018 Jan 18.
The two-dimensional transition-metal dichalcogenide semiconductor MoS has received extensive attention for decades because of its outstanding electrical and mechanical properties for next-generation devices. One weakness of MoS, however, is that it shows only n-type conduction, revealing its limitations for homogeneous PN diodes and complementary inverters. Here, we introduce a charge-transfer method to modify the conduction property of MoS from n- to p-type. We initially deposited an n-type InGaZnO (IGZO) film on top of the MoS flake so that electron charges might be transferred from MoS to IGZO during air ambient annealing. As a result, electron charges were depleted in MoS. Such charge depletion lowered the MoS Fermi level, which makes hole conduction favorable in MoS when optimum source/drain electrodes with a high work function are selected. Our IGZO-supported MoS flake field effect transistors (FETs) clearly display channel-type conversion from n- to p-channel in this way. Under short- and long-annealing conditions, n- and p-channel MoS FETs are achieved, respectively, and a low-voltage complementary inverter is demonstrated using both channels in a single MoS flake.
二维过渡金属二卤族化合物半导体 MoS 因其在下一代器件中具有出色的电学和机械性能而受到广泛关注。然而，MoS 的一个弱点是它仅表现出 n 型传导，这揭示了其在同质 PN 二极管和互补反相器中的局限性。在这里，我们介绍了一种电荷转移方法，将 MoS 的传导性质从 n 型修改为 p 型。我们最初在 MoS 薄片上沉积了一层 n 型 InGaZnO（IGZO）薄膜，以便在空气环境退火过程中电子电荷可能从 MoS 转移到 IGZO。结果，电子电荷在 MoS 中耗尽。这种电荷耗尽降低了 MoS 的费米能级，这使得在选择具有高功函数的最佳源/漏电极时，MoS 中的空穴传导变得有利。我们的 IGZO 支持的 MoS 薄片场效应晶体管（FET）通过这种方式清楚地显示了从 n 沟道到 p 沟道的沟道类型转换。在短和长退火条件下，分别获得了 n 沟道和 p 沟道 MoS FET，并且在单个 MoS 薄片中使用两个通道展示了低压互补反相器。
