Rong Youying, Cheng Ke, Ju Zhiping, Pan Chengda, Ma Qiang, Liu Shikang, Shen Si, Wu Botao, Jia Tianqing, Zeng Heping
Opt Lett. 2019 Aug 1;44(15):3793-3796. doi: 10.1364/OL.44.003793.
We report the generation of single negatively charged silicon vacancy (SiV) color centers by focusing a femtosecond (fs) laser on top of a high-purity diamond coated with a layer of Si nanoball. Under the interaction of a high-intensity fs laser, Si atoms were ionized and implanted into the diamond, accompanied with the creation of vacancies. After annealing at 850°C in vacuum for 1 h, the photoluminescence spectra of bright spots around the created crater presented a typical strong zero-phonon line at around 737 nm of SiV centers. Bright single SiV color centers could be observed with a maximum saturating counting rate of 300×10 counts/s. We explain the formation mechanism of SiV centers in diamond via a Coulomb explosion model. The results demonstrate that fs laser ablation can be utilized as a very promising tool to conveniently fabricate single bright SiV centers in diamond.
我们报道了通过将飞秒（fs）激光聚焦在涂有一层硅纳米球的高纯度金刚石上，生成单个带负电荷的硅空位（SiV）色心。在高强度飞秒激光的作用下，硅原子被电离并注入到金刚石中，同时产生空位。在真空中850°C退火1小时后，所形成坑周围亮点的光致发光光谱在约737nm处呈现出典型的强零声子线，这是SiV中心的特征。可以观察到明亮的单个SiV色心，其最大饱和计数率为300×10 counts/s。我们通过库仑爆炸模型解释了金刚石中SiV中心的形成机制。结果表明，飞秒激光烧蚀可作为一种非常有前景的工具，用于方便地在金刚石中制备单个明亮的SiV中心。
