Imajo T, Toko K, Takabe R, Saitoh N, Yoshizawa N, Suemasu T
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki, 305-8573, Japan.
Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba, 305-8569, Japan.
Nanoscale Res Lett. 2018 Jan 16;13(1):22. doi: 10.1186/s11671-018-2437-1.
Semiconductor strontium digermanide (SrGe) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe to high-efficiency thin-film solar cells.
半导体二锗化锶（SrGe）在近红外光区域具有较大的吸收系数，有望用于多结太阳能电池。本研究首次展示了通过在锗衬底上进行反应沉积外延形成SrGe薄膜。SrGe的生长形态根据生长温度（300 - 700°C）和锗衬底的晶体取向而发生显著变化。我们在500°C下使用Ge（110）衬底成功获得了单晶取向的SrGe。在硅或玻璃衬底上的开发将使SrGe应用于高效薄膜太阳能电池。
