Linseis V, Völklein F, Reith H, Nielsch K, Woias P
Institute of Nanostructure and Solid State Physics, Universität Hamburg, 20355 Hamburg, Germany.
Institute for Microtechnologies, RheinMain University of Applied Sciences Wiesbaden, 65428 Ruesselsheim, Germany.
Rev Sci Instrum. 2018 Jan;89(1):015110. doi: 10.1063/1.5005807.
The characterization of nanostructured samples with at least one restricted dimension like thin films or nanowires is challenging, but important to understand their structure and transport mechanism, and to improve current industrial products and production processes. We report on the 2nd generation of a measurement chip, which allows for a simplified sample preparation process, and the measurement of samples deposited from the liquid phase using techniques like spin coating and drop casting. The new design enables us to apply much higher temperature gradients for the Seebeck coefficient measurement in a shorter time, without influencing the sample holder's temperature distribution. Furthermore, a two membrane correction method for the 3ω thermal conductivity measurement will be presented, which takes the heat loss due to radiation into account and increases the accuracy of the measurement results significantly. Errors caused by different sample compositions, varying sample geometries, and different heat profiles are avoided with the presented measurement method. As a showcase study displaying the validity and accuracy of our platform, we present temperature-dependent measurements of the thermoelectric properties of an 84 nm BiSb thin film and a 15 μm PEDOT:PSS thin film.
对具有至少一个受限维度的纳米结构样品（如薄膜或纳米线）进行表征具有挑战性，但对于理解其结构和传输机制、改进当前工业产品及生产工艺而言至关重要。我们报道了第二代测量芯片，它简化了样品制备过程，并能使用旋涂和滴铸等技术测量从液相沉积的样品。新设计使我们能够在更短时间内为塞贝克系数测量施加更高的温度梯度，同时不影响样品支架的温度分布。此外，还将介绍一种用于三ω热导率测量的双膜校正方法，该方法考虑了辐射导致的热损失，并显著提高了测量结果的准确性。所提出的测量方法避免了由不同样品成分、变化的样品几何形状和不同热分布引起的误差。作为展示我们平台有效性和准确性的案例研究，我们给出了84纳米铋锑薄膜和15微米聚（3,4 - 乙烯二氧噻吩）：聚苯乙烯磺酸盐薄膜热电性能的温度相关测量结果。
