超净单个悬浮单壁碳纳米管场效应晶体管

Ultraclean individual suspended single-walled carbon nanotube field effect transistor.

作者信息

Liu Siyu, Zhang Jian, Nshimiyimana Jean Pierre, Chi Xiannian, Hu Xiao, Wu Pei, Liu Jia, Wang Gongtang, Sun Lianfeng

机构信息

School of Physics and Electronics, Shandong Normal University, Jinan, 250258, People's Republic of China. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.

出版信息

Nanotechnology. 2018 Apr 27;29(17):175302. doi: 10.1088/1361-6528/aaaf4f. Epub 2018 Feb 14.

DOI:10.1088/1361-6528/aaaf4f

PMID:29442999

Abstract

In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (∼50 kΩ), mobility of 8600 cm V s and large on/off ratio (∼10) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

摘要

在这项工作中，我们报告了一种制造超洁净单个悬浮单壁碳纳米管（SWNT）晶体管的有效技术。在退火处理期间，利用熔融银的表面张力将单个SWNT悬浮在一对钯电极之间。这种方法避免了附着在SWNTs上的有机抗蚀剂的使用及其残留物，从而得到超洁净的SWNT器件。并且发现悬浮SWNTs每微米的电阻小于非悬浮SWNTs的电阻，这表明衬底对SWNTs电学性质的影响。半导体悬浮SWNT器件的导通状态电阻（约50 kΩ）、8600 cm² V⁻¹ s⁻¹的迁移率以及大的开/关比（约10）表明了其优势和潜在应用。