Chun Sung-Yong
Department of Advanced Materials Science and Engineering, Mokpo National University, Jeonnam 534-729, Republic of Korea.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):1499-1502. doi: 10.1166/jnn.2018.14932.
Niobium nitride (NbN) films were deposited using asymmetric-bipolar pulsed dc sputtering at different pulse parameters. Microstructural, electrical and mechanical characterizations were performed by FE-SEM, AFM, LCR meter and nanoindentator. The results show that pulse frequency has significant effects on coating's microstructure, structural and electrical properties of NbN films. With an increase in pulse frequency, coating microstructure evolved from a porous columnar structure to a highly dense one. Average crystal grain sizes of NbN films were decreased from 52.7 nm to 27.5 nm with an increase in pulse frequency. The minimum resistivity of 351 μΩ-cm, the smoothest surface morphology with Ra roughness of 0.4 nm and the maximum hardness of 17.4 GPa were obtained for the films deposited at pulse frequency of 50 kHz, respectively.
采用非对称双极脉冲直流溅射法在不同脉冲参数下沉积氮化铌（NbN）薄膜。通过场发射扫描电子显微镜（FE-SEM）、原子力显微镜（AFM）、LCR 测试仪和纳米压痕仪对薄膜进行微观结构、电学和力学性能表征。结果表明，脉冲频率对 NbN 薄膜的微观结构、结构和电学性能有显著影响。随着脉冲频率的增加，涂层微观结构从多孔柱状结构演变为高度致密的结构。随着脉冲频率的增加，NbN 薄膜的平均晶粒尺寸从 52.7nm 减小到 27.5nm。对于在 50kHz 脉冲频率下沉积的薄膜，分别获得了 351μΩ·cm 的最小电阻率、Ra 粗糙度为 0.4nm 的最光滑表面形貌和 17.4GPa 的最大硬度。
