Chun Sung-Yong
Department of Advanced Materials Engineering, Mokpo National University, Muan, Jeonnam 58554, Republic of Korea.
J Nanosci Nanotechnol. 2021 Jul 1;21(7):4129-4132. doi: 10.1166/jnn.2021.19216.
Hafnium nitride (HfN) thin films with low electrical resistivity were obtained by inductively coupled plasma assisted magnetron sputtering as a function of ICP power. Microstructural, crystallographic and sheet resistance characterizations of HfN films were performed by field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and 4 point probe method. The results show that ICP has significant effects on coating's microstructure, structural and electrical properties of HfN films. With an increase in ICP power, thin film microstructure evolved from a porous columnar structure to a highly dense one. HfN thin films with different crystal structure and phases were obtained as a function of ICP power. The minimum resistivity of 125 -cm, the smoothest surface morphology with roughness of 5.9 nm were obtained for the HfN films deposited at ICP power of 200 W.
通过电感耦合等离子体辅助磁控溅射，作为电感耦合等离子体（ICP）功率的函数，获得了具有低电阻率的氮化铪（HfN）薄膜。通过场发射扫描电子显微镜（FE-SEM）、原子力显微镜（AFM）、X射线衍射（XRD）和四点探针法对HfN薄膜进行了微观结构、晶体结构和薄层电阻表征。结果表明，ICP对HfN薄膜的涂层微观结构、结构和电学性能有显著影响。随着ICP功率的增加，薄膜微观结构从多孔柱状结构演变为高度致密的结构。作为ICP功率的函数，获得了具有不同晶体结构和相的HfN薄膜。对于在200W的ICP功率下沉积的HfN薄膜，获得了125Ω·cm的最小电阻率、粗糙度为5.9nm的最光滑表面形貌。
