采用n型Al:ZnO和p型NiO薄膜晶体管的三维堆叠互补薄膜晶体管。

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

作者信息

Lee Ching-Ting, Chen Chia-Chi, Lee Hsin-Ying

机构信息

Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, 701, Taiwan, Republic of China.

Department of Photonics Engineering, Yuan Ze University, Taoyuan 320, Taiwan, Republic of China.

出版信息

Sci Rep. 2018 Mar 5;8(1):3968. doi: 10.1038/s41598-018-22430-6.

DOI:10.1038/s41598-018-22430-6

PMID:29507329

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5838160/

Abstract

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

摘要

三维逆变器是采用堆叠式底部n型掺铝氧化锌（Al:ZnO）薄膜晶体管和顶部p型氧化镍（NiO）薄膜晶体管的新型互补结构制造而成。当逆变器在10 V的直流电压（V）下工作且输入电压从0 V到10 V时，所获得的高性能包括9.9 V的输出摆幅、2.7 V的高噪声容限和2.2 V的低噪声容限。此外，通过使用堆叠式n型Al:ZnO薄膜晶体管和p型氧化镍（NiO）薄膜晶体管的新型互补结构，展示了非对称逆变器的高性能。