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在环境空气中通过激光诱导辅助激光清洗制备的大规模宽带光捕获黑硅纹理

Large-Scale Wideband Light-Trapping Black Silicon Textured by Laser Inducing Assisted with Laser Cleaning in Ambient Air.

作者信息

Wen Zhidong, Zhang Zhe, Zhang Kunpeng, Li Jiafa, Shi Haiyan, Li Man, Hou Yu, Xue Mei, Zhang Zichen

机构信息

Microelectronics Instruments and Equipment R & D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

School of Integrated Circuits, University of Chinese Academy of Sciences, No. 19 (A) Yuquan Road, Beijing 100049, China.

出版信息

Nanomaterials (Basel). 2022 May 23;12(10):1772. doi: 10.3390/nano12101772.

DOI:10.3390/nano12101772
PMID:35630993
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9142894/
Abstract

Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF atmosphere. Considering the effect of SF gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3-2.5 µm, the role of air could replace SF gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF. Moreover, absorptance above 85% in the wavelength range of 0.3-15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.

摘要

黑硅因其光学特性而成为一种有吸引力的材料,主要通过在SF气氛中激光诱导制备。考虑到SF气体对环境和人体健康的影响,在此我们提出一种高效、经济且绿色的方法来大规模制备黑硅。在0.3 - 2.5 µm波长范围内,空气可通过适当的加工参数激光诱导替代SF气体来使黑硅形成纹理。然后,为扩展其优异光捕获状态的工作窗口,引入激光等离子体冲击波清洗以消除沉积物并改善结构和形貌。结果表明,随着清洗次数增加和清洗速度降低,微纳结构变得更高、更致密且更均匀,这弥补了来自周围SF中S原子的作用。此外,使用我们的方法在0.3 - 15 µm波长范围内实现了高于85%的吸收率。还讨论了相邻行之间的扫描间距对大规模黑硅的影响。我们的方法实现了在空气中制备的大规模黑硅从可见光到中红外的超高吸收率,这在光电器件领域具有重要意义。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/1ca623a979c5/nanomaterials-12-01772-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/16705ea598f0/nanomaterials-12-01772-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/6e9135bf133a/nanomaterials-12-01772-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/91e09967660f/nanomaterials-12-01772-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/0db7f88b6992/nanomaterials-12-01772-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/9d66de21dfdb/nanomaterials-12-01772-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/57b17d35c21b/nanomaterials-12-01772-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/1ca623a979c5/nanomaterials-12-01772-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/16705ea598f0/nanomaterials-12-01772-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/6e9135bf133a/nanomaterials-12-01772-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/91e09967660f/nanomaterials-12-01772-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/0db7f88b6992/nanomaterials-12-01772-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/9d66de21dfdb/nanomaterials-12-01772-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/57b17d35c21b/nanomaterials-12-01772-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/9e69/9142894/1ca623a979c5/nanomaterials-12-01772-g007.jpg

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