具有HfO缺陷控制层的单壁碳纳米管主导的微米宽条纹图案化铁电场效应晶体管。

Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO Defect Control Layer.

作者信息

Tan Qiuhong, Wang Qianjin, Liu Yingkai, Yan Hailong, Cai Wude, Yang Zhikun

机构信息

School of Energy and Environment Science, Yunnan Normal University, Yunnan, Kunming, 650500, China.

Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan, Kunming, 650500, China.

出版信息

Nanoscale Res Lett. 2018 Apr 27;13(1):127. doi: 10.1186/s11671-018-2534-1.

DOI:10.1186/s11671-018-2534-1

PMID:29700706

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5919893/

Abstract

Ferroelectric field-effect transistors (FeFETs) with single-walled carbon nanotube (SWCNT) dominated micron-wide stripe patterned as channel, (Bi,Nd)TiO films as insulator, and HfO films as defect control layer were developed and fabricated. The prepared SWCNT-FeFETs possess excellent properties such as large channel conductance, high on/off current ratio, high channel carrier mobility, great fatigue endurance performance, and data retention. Despite its thin capacitance equivalent thickness, the gate insulator with HfO defect control layer shows a low leakage current density of 3.1 × 10 A/cm at a gate voltage of - 3 V.

摘要

开发并制造了以单壁碳纳米管（SWCNT）为主的微米宽条纹图案作为沟道、（Bi，Nd）TiO 薄膜作为绝缘体、HfO 薄膜作为缺陷控制层的铁电场效应晶体管（FeFET）。制备的 SWCNT-FeFET 具有优异的性能，如大沟道电导、高开关电流比、高沟道载流子迁移率、出色的疲劳耐久性和数据保持能力。尽管其等效电容厚度很薄，但具有 HfO 缺陷控制层的栅极绝缘体在栅极电压为 -3 V 时显示出 3.1×10⁻⁶ A/cm² 的低漏电流密度。