Queensland Micro- and Nanotechnology Centre, Griffith University, Nathan, QLD 4111, Australia.
Sensors (Basel). 2018 Jun 2;18(6):1797. doi: 10.3390/s18061797.
We summarize the recipes and describe the role of sputtering parameters in producing highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is collated from the analysis of around 80 journal articles that sputtered this film on variety of substrate materials, processes and equipment. This review will be a good starting point to catch up with the state-of-the-arts research on the reactive sputtering of AlN (002) thin film, as well as its evolving list of piezoelectric applications such as energy harvesters.
我们总结了食谱,并描述了在用于压电应用的高度 c 轴氮化铝 (AlN) 薄膜的生产中溅射参数的作用。这些信息是从大约 80 篇分析在各种衬底材料、工艺和设备上溅射这种薄膜的期刊文章的分析中整理出来的。这篇综述将是一个很好的起点,可以了解氮化铝 (002) 薄膜反应溅射的最新研究进展,以及它在能源收集器等不断发展的压电应用领域。