具有超薄氧化铝钝化层的全无机量子点发光二极管的效率提高超过 800%。

Over 800% efficiency enhancement of all-inorganic quantum-dot light emitting diodes with an ultrathin alumina passivating layer.

机构信息

Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), Department of Physics, Jilin University, Changchun, 130023, China.

出版信息

Nanoscale. 2018 Jun 14;10(23):11103-11109. doi: 10.1039/c8nr01460d.

DOI:10.1039/c8nr01460d

PMID:29872832

Abstract

The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and lower cost than their organic counterparts. We achieve here an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. Both transient resolution photoluminescence and X-ray photoelectron spectroscopy measurements demonstrate that the Al2O3 layer can effectively passivate NiOOH on the s-NiO surface, thereby suppressing exciton quenching. This improves the highest efficiency of the QLED without an Al2O3 layer by over 800% to a current efficiency (external quantum efficiency) of 34.1 cd A-1 (8.1%), making it the best-performing all-inorganic QLED.

摘要

在量子点发光二极管（QLED）中，通常希望使用坚固的无机电荷传输材料，因为它们有望比有机对应物具有更高的稳定性和更低的成本。通过用超薄的 Al2O3 钝化层修饰溶液处理的 NiO（s-NiO）表面，我们在此实现了具有优异效率的全无机 QLED。瞬态分辨率光致发光和 X 射线光电子能谱测量表明，Al2O3 层可以有效地钝化 s-NiO 表面上的 NiOOH，从而抑制激子猝灭。这将没有 Al2O3 层的 QLED 的最高效率提高了 800%以上，电流效率（外量子效率）达到 34.1 cd A-1（8.1%），使其成为性能最佳的全无机 QLED。