具有减少激子猝灭的全无机量子点发光二极管，通过 MgO 修饰的无机空穴传输层实现。

All-Inorganic Quantum-Dot Light-Emitting Diodes with Reduced Exciton Quenching by a MgO Decorated Inorganic Hole Transport Layer.

机构信息

State Key Lab on Advanced Displays and Optoelectronics , The Hong Kong University of Science & Technology , Clear Water Bay , Kowloon , Hong Kong.

College of Electronic Science and Technology , Shenzhen University , Shenzhen , 518060 , P.R. China.

出版信息

ACS Appl Mater Interfaces. 2019 Mar 27;11(12):11119-11124. doi: 10.1021/acsami.9b01742. Epub 2019 Mar 18.

DOI:10.1021/acsami.9b01742

PMID:30874422

Abstract

Here, wide-bandgap magnesium oxide (MgO) is employed as a decorator for the nickel oxide (NiO ) hole transport layer (HTL), by means of a bulk dopant as well as a surface modifier. QLEDs with NiMgO serving as the HTL achieve an ∼19.5% efficiency improvement compared to devices using pristine NiO . Further inserting an ultrathin MgO layer between the NiMgO and QDs to separate the accumulated charges from excitons goes on boosting the peak efficiency by another ∼35%. Finally, a maximum brightness over 40 000 cd/m at 10 V is obtained, which is the highest among the reported values.

摘要

在这里，宽带隙氧化镁 (MgO) 被用作氧化镍 (NiO) 空穴传输层 (HTL) 的修饰剂，通过体掺杂和表面修饰来实现。与使用原始 NiO 的器件相比，以 NiMgO 为 HTL 的 QLED 实现了约 19.5%的效率提升。进一步在 NiMgO 和 QDs 之间插入一个超薄的 MgO 层，将积累的电荷与激子分离，从而进一步将峰值效率提高了约 35%。最后，在 10 V 时获得了超过 40,000 cd/m 的最大亮度，这在已报道的值中是最高的。