Concepción Omar, Søgaard Nicolaj B, Bae Jin-Hee, Yamamoto Yuji, Tiedemann Andreas T, Ikonic Zoran, Capellini Giovanni, Zhao Qing-Tai, Grützmacher Detlev, Buca Dan
Peter Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany.
Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark.
ACS Appl Electron Mater. 2023 Apr 3;5(4):2268-2275. doi: 10.1021/acsaelm.3c00112. eCollection 2023 Apr 25.
Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge Sn alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge Sn layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge Sn layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.
基于半导体的量子阱结构的外延是一项具有挑战性的任务，因为它需要在亚单层尺度上精确控制沉积过程。对于锗锡合金而言，生长要求尤为苛刻，因为晶格应变和工艺温度会极大地影响外延层的成分。本文介绍了在工业兼容的减压化学气相沉积反应器中，采用等温工艺实现锡含量范围为6原子%至15原子%的高质量赝晶锗锡层。锗锡层的外延已针对在较大工艺窗口内提供高锡浓度的标准工艺进行了优化。通过改变氮气载气流量，获得了适用于量子输运和自旋电子器件的等温异质结构设计。
