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磁电绝缘体中斯格明子相的直接电场控制

Direct electric field control of the skyrmion phase in a magnetoelectric insulator.

作者信息

Kruchkov A J, White J S, Bartkowiak M, Živković I, Magrez A, Rønnow H M

机构信息

Department of Physics, Harvard University, Cambridge, MA, 02138, USA.

Laboratory for Quantum Magnetism (LQM), Insititute of Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015, Lausanne, Switzerland.

出版信息

Sci Rep. 2018 Jul 11;8(1):10466. doi: 10.1038/s41598-018-27882-4.

DOI:10.1038/s41598-018-27882-4
PMID:29992965
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6041276/
Abstract

Magnetic skyrmions are topologically protected spin-whirls currently considered as promising for use in ultra-dense memory devices. Towards achieving this goal, exploration of the skyrmion phase response and under external stimuli is urgently required. Here we show experimentally, and explain theoretically, that in the magnetoelectric insulator CuOSeO the skyrmion phase can expand and shrink significantly depending on the polarity of a moderate applied electric field (few V/μm). The theory we develop incorporates fluctuations around the mean-field that clarifies precisely how the electric field provides direct control over the free energy difference between the skyrmion and the surrounding conical phase. The quantitative agreement between theory and experiment provides a solid foundation for the development of skyrmionic applications based on magnetoelectric coupling.

摘要

磁斯格明子是一种拓扑保护的自旋涡旋,目前被认为有望用于超密集存储设备。为了实现这一目标,迫切需要探索斯格明子相在外部刺激下的响应。在这里,我们通过实验表明,并从理论上解释,在磁电绝缘体CuOSeO中,斯格明子相可以根据适度施加电场(几伏/微米)的极性显著地扩展和收缩。我们发展的理论纳入了围绕平均场的涨落,精确地阐明了电场如何直接控制斯格明子与周围锥形相之间的自由能差。理论与实验之间的定量一致性为基于磁电耦合的斯格明子应用的发展提供了坚实的基础。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/566ec42f05a0/41598_2018_27882_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/d0e543a8c763/41598_2018_27882_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/5a5f1cd9ca05/41598_2018_27882_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/566ec42f05a0/41598_2018_27882_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/d0e543a8c763/41598_2018_27882_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/5a5f1cd9ca05/41598_2018_27882_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/c682/6041276/566ec42f05a0/41598_2018_27882_Fig3_HTML.jpg

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本文引用的文献

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Nat Commun. 2016 Sep 1;7:12669. doi: 10.1038/ncomms12669.
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Dramatic pressure-driven enhancement of bulk skyrmion stability.由压力驱动的大块斯格明子稳定性的显著增强。
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Uniaxial Pressure Dependence of Magnetic Order in MnSi.锰硅的单轴压力下的磁有序
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Sci Rep. 2019 Jul 2;9(1):9528. doi: 10.1038/s41598-019-46009-x.
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Uniaxial stress control of skyrmion phase.斯格明子相的单轴应力控制
Nat Commun. 2015 Oct 13;6:8539. doi: 10.1038/ncomms9539.
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A new class of chiral materials hosting magnetic skyrmions beyond room temperature.一类新型的手性材料,可在室温以上容纳磁斯格明子。
Nat Commun. 2015 Jul 2;6:7638. doi: 10.1038/ncomms8638.
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Magnetism. Blowing magnetic skyrmion bubbles.磁性。吹磁性斯格明子泡。
Science. 2015 Jul 17;349(6245):283-6. doi: 10.1126/science.aaa1442. Epub 2015 Jun 11.
7
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Sci Rep. 2015 Mar 24;5:9400. doi: 10.1038/srep09400.
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Skyrmion-skyrmion and skyrmion-edge repulsions in skyrmion-based racetrack memory.基于斯格明子的赛道存储器中的斯格明子-斯格明子和斯格明子-边缘排斥力
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