Ferhati Hichem, Djeffal Fayçal, Bentrcia Toufik
LEA, Department of Electronics, University Mostefa Benboulaid-Batna 2, Batna 05000, Algeria.
LEPCM, University of Batna 1, Batna 05000, Algeria.
Beilstein J Nanotechnol. 2018 Jun 22;9:1856-1862. doi: 10.3762/bjnano.9.177. eCollection 2018.
In this paper, a new nanoscale double-gate junctionless tunneling field-effect transistor (DG-JL TFET) based on a Si Ge /Si/Ge heterojunction (HJ) structure is proposed to achieve an improved electrical performance. The effect of introducing the Si Ge material at the source side on improving the subthreshold behavior of the DG-JL TFET and on suppressing ambipolar conduction is investigated. Moreover, the impact of the Ge mole fraction in the proposed Si Ge source region on the electrical figures of merit () of the transistor, including the swing factor and the / ratio is analyzed. It is found that the optimized design with 60 atom % of Ge offers improved switching behavior and enhanced derived current capability at the nanoscale level, with a swing factor of 42 mV/dec and an / ratio of 115 dB. Further, the scaling capability of the proposed Si Ge /Si/Ge DG-HJ-JL TFET structure is investigated and compared to that of a conventional Ge-DG-JL TFET design, where the optimized design exhibits an improved switching behavior at the nanoscale level. These results make the optimized device suitable for designing digital circuit for high-performance nanoelectronic applications.
本文提出了一种基于SiGe/Si/Ge异质结（HJ）结构的新型纳米级双栅无结隧穿场效应晶体管（DG-JL TFET），以实现更好的电学性能。研究了在源极侧引入SiGe材料对改善DG-JL TFET亚阈值行为和抑制双极性传导的影响。此外，分析了所提出的SiGe源极区域中Ge摩尔分数对晶体管电学品质因数（）的影响，包括摆幅因子和/比。研究发现，含60原子% Ge的优化设计在纳米尺度上具有更好的开关行为和增强的衍生电流能力，摆幅因子为42 mV/dec，/比为115 dB。此外，研究了所提出的SiGe/Si/Ge DG-HJ-JL TFET结构的缩放能力，并与传统Ge-DG-JL TFET设计进行了比较，其中优化设计在纳米尺度上表现出更好的开关行为。这些结果使得优化后的器件适用于设计高性能纳米电子应用的数字电路。
