An Sung-Jin, Kim Yong Hwan, Lee Chanwoo, Park Dae Young, Jeong Mun Seok
Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
Sci Rep. 2018 Aug 28;8(1):12957. doi: 10.1038/s41598-018-31374-w.
Thin layer two-dimensional (2-D) transition metal dichalcogenide (TMD) materials have distinctive optoelectronic properties. Therefore, several methods including mechanical exfoliation, chemical vapor deposition, and liquid-phase exfoliation have been attempted to obtain uniform TMDs. However, such methods do not easily produce high-quality few-layer TMDs with high speed. Here, we report the successful fabrication of few-layer TMD materials by femtosecond laser irradiation. It shows that TMD samples can be exfoliated from bulk to ~3 layers. This method is much faster and simpler than other exfoliation methods. The size and number of the layers were confirmed by atomic force microscopy, scanning electron microscopy, Raman spectroscopy, and photoluminescence experiments. It is expected to be used for the mass production of thin 2-D TMD materials.
薄层二维（2-D）过渡金属二硫属化物（TMD）材料具有独特的光电特性。因此，人们尝试了包括机械剥离、化学气相沉积和液相剥离在内的多种方法来获得均匀的TMD材料。然而，这些方法不容易高速生产高质量的少层TMD材料。在此，我们报告了通过飞秒激光辐照成功制备少层TMD材料的方法。结果表明，TMD样品可以从块状剥离至约3层。该方法比其他剥离方法更快、更简单。通过原子力显微镜、扫描电子显微镜、拉曼光谱和光致发光实验确定了层的尺寸和数量。预计该方法可用于二维薄TMD材料的大规模生产。
