Liu Junku, Wang Yangyang, Xiao Xiaoyang, Zhang Kenan, Guo Nan, Jia Yi, Zhou Shuyun, Wu Yang, Li Qunqing, Xiao Lin
Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing, 100094, China.
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, China.
Nanoscale Res Lett. 2018 Sep 21;13(1):291. doi: 10.1186/s11671-018-2721-0.
Both p-type and n-type MoTe transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe, while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe transistors, we demonstrate a complementary inverter with gain values as high as 9 at V = 5 V.
制造互补型电子和光电器件需要p型和n型碲化钼晶体管。在本研究中，我们使用金作为电极制造了空气稳定的p型多层碲化钼晶体管，并通过在真空中退火将p型晶体管转换为n型。由第一性原理模拟结果辅助的温度相关原位测量表明，n型电导是一种本征特性，这归因于碲化钼中的碲空位，而空气中的器件经历由氧/水氧化还原对引起的电荷转移并转换为空气稳定的p型晶体管。基于p型和n型多层碲化钼晶体管，我们展示了一个在V = 5 V时增益值高达9的互补反相器。
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