Conversion of Multi-layered MoTe Transistor Between P-Type and N-Type and Their Use in Inverter.

Both p-type and n-type MoTe transistors are needed to fabricate complementary electronic and optoelectronic devices. In this study, we fabricate air-stable p-type multi-layered MoTe transistors using Au as electrode and achieve the conversion of p-type transistor to n-type by annealing it in vacuum. Temperature-dependent in situ measurements assisted by the results given by first-principle simulations indicate that n-type conductance is an intrinsic property, which is attributed to tellurium vacancies in MoTe, while the device in air experiences a charge transfer which is caused by oxygen/water redox couple and is converted to air-stable p-type transistor. Based on p-type and n-type multi-layered MoTe transistors, we demonstrate a complementary inverter with gain values as high as 9 at V = 5 V.